A full-coupling model of PN junctions based on the global-domain carrier motions with inclusion of the two metal/semiconductor contacts at endpoints

Wanli YANG, Jinxi LIU, Yongliang XU, Yuantai HU

doi:10.1007/s10483-020-2617-9

2020 , Vol. 41 >Issue 6: 845 - 858

DOI: https://doi.org/10.1007/s10483-020-2617-9

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A full-coupling model of PN junctions based on the global-domain carrier motions with inclusion of the two metal/semiconductor contacts at endpoints

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1. Department of Mechanics, Hubei Key Laboratory of Engineering Structural Analysis and Safety Assessment, Huazhong University of Science and Technology, Wuhan 430074, China;
2. Department of Engineering Mechanics, Shijiazhuang Tiedao University, Shijiazhuang 050043, China

Received date: 2020-02-10

Revised date: 2020-03-10

Online published: 2020-06-08

Supported by

Project supported by the National Natural Science Foundation of China (Nos. 11972164, 11672113, and 11472182) and the Key Laboratory Project of Hubei Province of China (No. 2016CFA073)

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Abstract

A full-coupling model on the current-voltage (J-V) characteristics of PN junctions is put forward in the paper by taking into account both the whole junction and the two electrode regions consisting of metal/semiconductor (M/S) contacts. The depletion layer assumption proposed by the Shockley model is discarded. Gauss' law on the electric potential and the electric field is applied in the whole junction region such that the majority-carrier currents inside and outside the P/N barrier region are able to be exactly defined and clearly calculated. Then, the stable continuity equations of the electron and hole currents are established to show the current conversion between minority- and majority-carriers inside the whole PN junction region. By analyzing all the conversion procedure, the J-V characteristics of a PN junction are obtained with good agreement to the experimental results, which are closely dependent on the minority-carrier lifetime and doping concentrations. Obviously, the study on this topic possesses referential significance to mechanically tuning the performance of piezoelectric PN junctions and piezotronic devices.

Key words： semiconductor; current-voltage (J-V) characteristic; minority- and majoritycarrier currents; depletion layer approximation; minority-carrier lifetime

Cite this article

Wanli YANG, Jinxi LIU, Yongliang XU, Yuantai HU . A full-coupling model of PN junctions based on the global-domain carrier motions with inclusion of the two metal/semiconductor contacts at endpoints[J]. Applied Mathematics and Mechanics, 2020 , 41(6) : 845 -858 . DOI: 10.1007/s10483-020-2617-9

References

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