Applied Mathematics and Mechanics >
Indentation behavior of a semi-infinite piezoelectric semiconductor under a rigid flat-ended cylindrical indenter
Received date: 2023-11-30
Online published: 2024-04-08
Supported by
the National Natural Science Foundation of China(12072209);the National Natural Science Foundation of China(U21A20430);the National Natural Science Foundation of China(12192211);the Natural Science Foundation of Hebei Province of China(A2020210009);the S&T Program of Hebei Province of China(225676162GH);Project supported by the National Natural Science Foundation of China (Nos.12072209, U21A20430, and 12192211), the Natural Science Foundation of Hebei Province of China (No.A2020210009), and the S&T Program of Hebei Province of China (No.225676162GH)
Copyright
This paper theoretically studies the axisymmetric frictionless indentation of a transversely isotropic piezoelectric semiconductor (PSC) half-space subject to a rigid flat-ended cylindrical indenter. The contact area and other surface of the PSC half-space are assumed to be electrically insulating. By the Hankel integral transformation, the problem is reduced to the Fredholm integral equation of the second kind. This equation is solved numerically to obtain the indentation behaviors of the PSC half-space, mainly including the indentation force-depth relation and the electric potential-depth relation. The results show that the effect of the semiconductor property on the indentation responses is limited within a certain range of variation of the steady carrier concentration. The dependence of indentation behavior on material properties is also analyzed by two different kinds of PSCs. Finite element simulations are conducted to verify the results calculated by the integral equation technique, and good agreement is demonstrated.
Shijing GAO, Lele ZHANG, Jinxi LIU, Guoquan NIE, Weiqiu CHEN . Indentation behavior of a semi-infinite piezoelectric semiconductor under a rigid flat-ended cylindrical indenter[J]. Applied Mathematics and Mechanics, 2024 , 45(4) : 649 -662 . DOI: 10.1007/s10483-024-3107-5
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