The mechanism to reform dynamic performance of an elastic wave-front in a piezoelectric semiconductor by the wave-carrier interaction induced from static biasing fields

doi:10.1007/s10483-023-2968-7

Applied Mathematics and Mechanics (English Edition) ›› 2023, Vol. 44 ›› Issue (3): 381-396.doi: https://doi.org/10.1007/s10483-023-2968-7

The mechanism to reform dynamic performance of an elastic wave-front in a piezoelectric semiconductor by the wave-carrier interaction induced from static biasing fields

Wanli YANG¹, Jinxi LIU², Yizhan YANG¹, Yuantai HU¹

1. Department of Mechanics, Hubei Key Laboratory of Engineering Structural Analysis and Safety Assessment, Huazhong University of Science and Technology, Wuhan 430074, China;
2. Department of Engineering Mechanics, Shijiazhuang Tiedao University, Shijiazhuang 050043, China

收稿日期:2022-10-19 修回日期:2022-11-29 发布日期:2023-02-27
通讯作者: Yuantai HU, E-mail: hudeng@263.net
基金资助:
the National Natural Science Foundation of China (Nos. 12232007, 12102141, U21A20430, and 11972164) and the Chinese Postdoctoral Science Foundation (No. 2022M711252)

The mechanism to reform dynamic performance of an elastic wave-front in a piezoelectric semiconductor by the wave-carrier interaction induced from static biasing fields

Wanli YANG¹, Jinxi LIU², Yizhan YANG¹, Yuantai HU¹

1. Department of Mechanics, Hubei Key Laboratory of Engineering Structural Analysis and Safety Assessment, Huazhong University of Science and Technology, Wuhan 430074, China;
2. Department of Engineering Mechanics, Shijiazhuang Tiedao University, Shijiazhuang 050043, China

Received:2022-10-19 Revised:2022-11-29 Published:2023-02-27
Contact: Yuantai HU, E-mail: hudeng@263.net
Supported by:
the National Natural Science Foundation of China (Nos. 12232007, 12102141, U21A20430, and 11972164) and the Chinese Postdoctoral Science Foundation (No. 2022M711252)

摘要/Abstract

摘要： The propagation of an elastic wave (EW) in a piezoelectric semiconductor (PSC) subjected to static biasing fields is investigated. It is found that there exist two coupling waves between electric field and charge carriers. One is stimulated by the action of the polarized electric field in the EW-front on charge carriers (EFC), and the other is stimulated by the action of initial electric field in biasing fields on dynamic carriers (IEC). Obviously, the latter is a man-made and tunable wave-carrier interaction. A careful study shows that IEC can play a leading role in remaking dynamic performance of the wave-front and an inter-medium role in transferring energy from biasing fields to EW-fronts. Hence, a method is proposed to reform the EW performance by biasing-fields: reforming the dispersivity of EW-fronts by promoting competition between IEC and EFC and inverting the dissipation by the IEC to transfer energy from biasing fields to EW-fronts. The corresponding tuning laws on the phase-frequency characteristics of an EW show that the wave velocity can be regulated smaller than the pure EW velocity at a low-frequency and larger than the pure piezoelectric wave velocity at a high-frequency. As for regulating the amplitude-frequency characteristics of the EW by the IEC, analyses show that EWs can obtain amplification only for those with relatively high vibration frequencies (small wave lengths). The studies will provide guidance for theoretical analysis of waves propagating in PSCs and practical application and design of piezotronic devices.

关键词: piezoelectric semiconductor (PSC), elastic wave (EW), carrier movement, biasing field, piezotronic device

Abstract: The propagation of an elastic wave (EW) in a piezoelectric semiconductor (PSC) subjected to static biasing fields is investigated. It is found that there exist two coupling waves between electric field and charge carriers. One is stimulated by the action of the polarized electric field in the EW-front on charge carriers (EFC), and the other is stimulated by the action of initial electric field in biasing fields on dynamic carriers (IEC). Obviously, the latter is a man-made and tunable wave-carrier interaction. A careful study shows that IEC can play a leading role in remaking dynamic performance of the wave-front and an inter-medium role in transferring energy from biasing fields to EW-fronts. Hence, a method is proposed to reform the EW performance by biasing-fields: reforming the dispersivity of EW-fronts by promoting competition between IEC and EFC and inverting the dissipation by the IEC to transfer energy from biasing fields to EW-fronts. The corresponding tuning laws on the phase-frequency characteristics of an EW show that the wave velocity can be regulated smaller than the pure EW velocity at a low-frequency and larger than the pure piezoelectric wave velocity at a high-frequency. As for regulating the amplitude-frequency characteristics of the EW by the IEC, analyses show that EWs can obtain amplification only for those with relatively high vibration frequencies (small wave lengths). The studies will provide guidance for theoretical analysis of waves propagating in PSCs and practical application and design of piezotronic devices.

Key words: piezoelectric semiconductor (PSC), elastic wave (EW), carrier movement, biasing field, piezotronic device

中图分类号:

82D37

Wanli YANG, Jinxi LIU, Yizhan YANG, Yuantai HU. The mechanism to reform dynamic performance of an elastic wave-front in a piezoelectric semiconductor by the wave-carrier interaction induced from static biasing fields[J]. Applied Mathematics and Mechanics (English Edition), 2023, 44(3): 381-396.

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The mechanism to reform dynamic performance of an elastic wave-front in a piezoelectric semiconductor by the wave-carrier interaction induced from static biasing fields

The mechanism to reform dynamic performance of an elastic wave-front in a piezoelectric semiconductor by the wave-carrier interaction induced from static biasing fields

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