Applied Mathematics and Mechanics (English Edition) ›› 2019, Vol. 40 ›› Issue (5): 591-600.doi: https://doi.org/10.1007/s10483-019-2481-6

• Articles •     Next Articles

Stress-induced potential barriers and charge distributions in a piezoelectric semiconductor nanofiber

Shuaiqi FAN1, Yuantai HU1, Jiashi YANG2   

  1. 1. Department of Mechanics, Hubei Key Laboratory of Engineering Structural Analysis and Safety Assessment, Huazhong University of Science and Technology, Wuhan 430074, China;
    2. Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0526, U. S. A
  • Received:2018-09-12 Revised:2018-11-20 Online:2019-05-01 Published:2019-05-01
  • Contact: Yuantai HU E-mail:hudeng@263.net
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Nos. 11672113 and 51435006) and the Key Laboratory Project of Hubei Province of China (No. 2016CFA073)

Abstract: The performance of a piecewise-stressed ZnO piezoelectric semiconductor nanofiber is studied with the multi-field coupling theory. The fields produced by equal and opposite forces as well as sinusoidally distributed forces are examined. Specific distributions of potential barriers, wells, and regions with effective polarization charges are found. The results are fundamental for the mechanical tuning on piezoelectric semiconductor devices and piezotronics.

Key words: plane and anti-plane strain, mixed-mode crack tip, anisotropic plastic stress, ZnO nanofiber, multi-field coupling theory, mechanical tuning, potential well, potential barrier

2010 MSC Number: 

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