Applied Mathematics and Mechanics (English Edition) ›› 2025, Vol. 46 ›› Issue (6): 1167-1186.doi: https://doi.org/10.1007/s10483-025-3259-6

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Analysis of the electromechanical coupling characteristics of piezoelectric semiconductor PN junction shell structures

Tiqing WANG1, Feng ZHU2, Peng LI1,3, Zelin XU1, Tingfeng MA4, I. KUZNETSOVA5, Zhenghua QIAN1,3,()   

  1. 1.State Key Laboratory of Mechanics and Control for Aerospace Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
    2.College of General Aviation and Flight, Nanjing University of Aeronautics and Astronautics, Liyang 213300, Jiangsu Province, China
    3.Shenzhen Research Institute, Nanjing University of Aeronautics and Astronautics, Shenzhen 518057, Guangdong Province, China
    4.Key Laboratory of Impact and Safety Engineering, Ministry of Education, Ningbo University, Ningbo 315211, Zhejiang Province, China
    5.Kotel'nikov Institute of Radio Engineering and Electronics of RAS, Moscow 125009, Russia
  • Received:2025-01-14 Revised:2025-04-07 Published:2025-06-06
  • Contact: Zhenghua QIAN, E-mail: qianzh@nuaa.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (No. 2023YFE0111000), the National Natural Science Foundation of China (Nos. 12372151, 12302200, 12172171, 12172183, and U24A2005), the Natural Science Foundation of Jiangsu Province of China (No. BK20230873), the China Postdoctoral Science Foundation (No. 2023M731671), the Jiangsu Funding Program for Excellent Postdoctoral Talent (No. 2023ZB156), the Shenzhen Science and Technology Program (No. JCYJ20230807142004009), the Jiangsu Association for Science & Technology Youth Science & Technology Talents Lifting Project, the Russian Ministry of Science and Higher Education (No. 075-15-2023-580), and the Shenzhen Longhua Science and Technology Innovation Special Funding Project (Industrial Sci-Tech Innovation Center of Low-Altitude Intelligent Networking)

Abstract:

Based on the nonlinear drift-diffusion (NLDD) model, the coupled behavior between the mechanical and electrical fields in piezoelectric semiconductor (PS) PN junctions under two typical loading conditions is investigated. The governing equations for the general shell structure of the PS PN junction are derived within the framework of virtual work principles and charge continuity conditions. The distributions of the electromechanical coupling field are obtained by the Fourier series expansion and the differential quadrature method (DQM), and the nonlinearity is addressed with the iterative method. Several numerical examples are presented to investigate the effects of mechanical loading on the charge carrier transport characteristics. It is found that the barrier height of the heterojunction can be effectively modulated by mechanical loading. Furthermore, a nonlinearity index is introduced to quantify the influence of nonlinearity in the model. It is noted that, when the concentration difference between the two sides is considerable, the nonlinear results differ significantly from the linear results, thereby necessitating the adoption of the NLDD model.

Key words: piezoelectric semiconductor (PS), PN junction, shell structures, nonlinear drift-diffusion (NLDD) model, potential barrier (well)

2010 MSC Number: 

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